Cl2/SCCMn:/SCCMAR/SCCM蚀刻速率/(μm/min)SelectivitInP:SiO2均方根/纳米150101.11328.7:1>2525370.49311.5;118.2235550.40713.0:115.8845730.3229.35:11.0758350.76817.0